Design and Implementation of CNFET SRAM Cells by Using Multi-Threshold Technique

نویسندگان

چکیده

This paper presents a CNFET (Carbon Nano-tube FET) based MT (Multi-Threshold)-SRAM (Static Random Access Memory) design on the leakage reduction mechanism. A multi-threshold logic is employed for reducing current during read/write operations. Here, technique used to insert high threshold sleep control low circuit. The insertion performed in serial manner. transistors are very useful deriving sub-threshold current. Meanwhile, promising improving circuit performance. high-low transistor pairs change channel length by modifying oxide thickness of transistors. overall implementation Multi-threshold-based SRAM cells implemented with help in-order avoid short effect, mobility degradation which occurred while considering below 32 nm CMOS (Complementary Metal Oxide Semiconductor) devices. clearly represents performance improvement proposed above-mentioned technologies.

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ژورنال

عنوان ژورنال: Electronics

سال: 2023

ISSN: ['2079-9292']

DOI: https://doi.org/10.3390/electronics12071611